|Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside. The minority carrier recombination times are τe = 490 ns for electrons in the p-side and τh = 2.5 ns for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I and the incremental resistance (rd) of the diode and why are they different?|
Delivering a high-quality product at a reasonable price is not enough anymore.
That’s why we have developed 5 beneficial guarantees that will make your experience with our service enjoyable, easy, and safe.
You have to be 100% sure of the quality of your product to give a money-back guarantee. This describes us perfectly. Make sure that this guarantee is totally transparent.Read more
Each paper is composed from scratch, according to your instructions. It is then checked by our plagiarism-detection software. There is no gap where plagiarism could squeeze in.Read more
Thanks to our free revisions, there is no way for you to be unsatisfied. We will work on your paper until you are completely happy with the result.Read more
Your email is safe, as we store it according to international data protection rules. Your bank details are secure, as we use only reliable payment systems.Read more
By sending us your money, you buy the service we provide. Check out our terms and conditions if you prefer business talks to be laid out in official language.Read more